! 8.2A, 30V rDS(ON) = 0.015Ω, VGS = 4.5V rDS(ON) = 0.020Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (n.

! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Lo.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ar.

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